Single pole four throw RF MEMS switch with double stop comb drive

This paper presents a lateral resistive contact single pole four throw (SP4T) RF MEMS switch composed of single crystalline silicon (SCS) and driven by double stop (DS) comb drive. Our goal was to develop the SP4T RF MEMS switch for band selection of a multi-band/multi- mode front-end module in a wireless transceiver system. The SP4T RF MEMS switch has drive voltage of 15 V, insertion loss below 0.31 dB at 6 GHz after more than one million cycles under 10 mW signal, return loss above 20 dB, and isolation above 36 dB. We developed the SP4T RF MEMS switch with low drive voltage, good RF characteristics, mechanical reliability, and uniform characteristic.