DocumentCode
292132
Title
Quasi-stationary acoustic charge transport in GaAs structures
Author
Bugaev, A.S. ; Zakharova, A.A.
Volume
1
fYear
1994
fDate
Oct. 31 1994-Nov. 3 1994
Firstpage
301
Abstract
Quasi-stationary charge transport by surface acoustic wave (SAW) in the structures with GaAs active layer is investigated theoretically. The accurate conditions for effective charge transfer by SAW are obtained using the proposed effective potential method. The carrier distribution and the current density in the charge packet are calculated analytically in the two-dimensional region of the structure
Keywords
III-V semiconductors; acoustic charge transport devices; carrier density; charge-coupled devices; gallium arsenide; surface acoustic wave devices; GaAs; active layer; carrier distribution; charge packet; current density; effective charge transfer; effective potential method; quasi-stationary acoustic charge transport; surface acoustic wave; two-dimensional region; Charge carrier processes; Charge coupled devices; Gallium materials/devices; Surface acoustic wave devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 1994. Proceedings., 1994 IEEE
Conference_Location
Cannes, France
Print_ISBN
0-7803-2012-3
Type
conf
DOI
10.1109/ULTSYM.1994.401599
Filename
401599
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