Title :
AlGaN-based deep ultraviolet LEDs: materials challenges and device performance
Author :
Crawford, M.H. ; Allerman, A.A. ; Fischer, A.J. ; Bogart, K.H.A. ; Lee, S.R. ; Chow, W.W.
Author_Institution :
Sandia National Laboratories, Albuquerque, NM 87185 USA, mhcrawf@andia.gov
Abstract :
We overview the materials challenges and device performance of deep ultraviolet-emitting AlGaN-based LEDs. Recent advances include milliwatt-level performance at 275-300 nm and the demonstration of electroluminescence at 254 nm and 237 nm.
Keywords :
AlGaN; LED; ultraviolet; Aluminum gallium nitride; Curing; Electroluminescence; Fluorescence; Gold; Laboratories; Light emitting diodes; Material properties; Piezoelectric films; Purification; AlGaN; LED; ultraviolet;
Conference_Titel :
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Print_ISBN :
0-7803-9242-6
DOI :
10.1109/CLEOPR.2005.1569442
