Large amplitude acoustoelectric interaction of surface acoustic waves in semiconductor-piezoelectric structure

A quasi-static and quasi-one dimensional method of calculation of acoustoelectric interaction of surface acoustic waves (SAW) in layered semiconductor-piezoelectric structures is developed. The method is based upon conceptions of the electron and hole quasi-Fermi levels and the surface electric impedance. Both the concentration and trap mechanisms of nonlinearity are taken into account. This permits to obtain a nonlinear solution in not only the small signal approximation. The solution obtained is valid for finite and also large SAW amplitudes and takes into account surface semiconductor properties, such as surface band bending and surface states. According to the method, nonlinear SAW attenuation and dispersion, convolution transverse acoustoelectric voltage (TAV), acoustoelectric current and charge transport, and acoustoelectric bistability are calculated and analyzed. The theoretical results obtained are in agreement with experimental results