Title :
A 5.2 GHz CMOS Low Noise Amplifier with High-Q Inductors Embedded in Wafer-Level Chip-Scale Package
Author :
Fukuda, Satoshi ; Ito, Hiroyuki ; Itoi, Kazuhisa ; Sato, Masakazu ; Ito, Tatsuya ; Yamauchi, Ryozo ; Okada, Kenichi ; Masu, Kazuya
Author_Institution :
Tokyo Inst. of Technol., Yokohama
Abstract :
This paper presents a low noise amplifier (LNA) with high-Q inductors in a wafer-level chip-scale package (WL-CSP) process. Q-factor of inductors has big impacts on characteristics of LNAs, thus we investigate availability of WL-CSP high-Q inductors. A common-source LNA with inductive degeneration is used for discussion. The 5.2 GHz LNA with WL-CSP inductors provides a noise figure of 1.7 dB which is 1.5 dB smaller than that with on-chip inductors.
Keywords :
CMOS integrated circuits; MMIC amplifiers; Q-factor; inductors; integrated circuit packaging; low noise amplifiers; CMOS low noise amplifier; LNA; Q-factor; frequency 5.2 GHz; noise figure; noise figure 1.7 dB; on-chip inductors; wafer-level chip-scale package; CMOS technology; Chip scale packaging; Circuits; Dielectric substrates; Inductors; Low-noise amplifiers; Q factor; Radio frequency; Resins; Wafer scale integration;
Conference_Titel :
Radio-Frequency Integration Technology, 2007. RFIT 007. IEEE International Workshop on
Conference_Location :
Rasa Sentosa Resort
Print_ISBN :
978-1-4244-1307-2
Electronic_ISBN :
978-1-4244-1308-9
DOI :
10.1109/RFIT.2007.4443913
