Monolithically integrated transceivers for 40 Gb/s applications

The ideal solution for full monolithic integration of the transceiver uses selective epitaxy for not only the optical devices, but also for the electronic devices. Optimized InGaAs photodetectors, integrated with InP double-heterojunction bipolar transistors, can be achieved using selective InP-based epitaxy. We have demonstrated monolithic integration of different device types and profiles in the InP material systems using selective regrowth techniques. These techniques are now being applied to achieve higher integration of transceiver components. We present the current state of the art for 40 Gb/s device performance, demonstrate monolithically integrated photoreceivers, and outline the path to full 40 Gb/s transceiver integration.