Title :
Design of low voltage low power dual-band LNA with forward body biasing technique
Author :
Dehqan, Ali Reza ; Mafinezhad, Khalil ; Kargaran, Ehsan ; Nabovati, Homan
Author_Institution :
Sadjad Inst. for Higher Educ., Mashhsd, Iran
Abstract :
A low voltage, low power dual band Low Noise Amplifier (LNA) is presented in this paper. By employing a forward body bias of the MOSFET and current reuse topology the LNA can be operated at reduced supply voltage and power consumption while maintaining high gain due to its topology. Using 0.18 um CMOS process the LNA is designed at 2.4 GHz and 5.2 GHz with 13.1 dB and 14.2 dB voltage gains and 2.9 dB and 2.6 dB NF respectively with 0.7 V supply voltage and 3 mW power consumption.
Keywords :
CMOS analogue integrated circuits; MOSFET; UHF amplifiers; integrated circuit design; low noise amplifiers; low-power electronics; microwave amplifiers; network topology; CMOS process; MOSFET; current reuse topology; forward body biasing technique; frequency 2.4 GHz; frequency 5.2 GHz; gain 13.1 dB; gain 14.2 dB; gain 2.6 dB; low voltage low power dual band low noise amplifier; low voltage low power dual-band LNA; noise figure 2.9 dB; power 3 mW; power consumption reduction; supply voltage reduction; voltage 0.7 V; CMOS integrated circuits; Dual band; Gain; Impedance; Noise measurement; Topology; Transconductance; Body bias; Dual-band LNA; Low voltage; current reuse topology;
Conference_Titel :
Electronics, Circuits and Systems (ICECS), 2011 18th IEEE International Conference on
Conference_Location :
Beirut
Print_ISBN :
978-1-4577-1845-8
Electronic_ISBN :
978-1-4577-1844-1
DOI :
10.1109/ICECS.2011.6122344
