Design of low voltage low power dual-band LNA with forward body biasing technique

Author

Dehqan, Ali Reza ; Mafinezhad, Khalil ; Kargaran, Ehsan ; Nabovati, Homan

Author_Institution

Sadjad Inst. for Higher Educ., Mashhsd, Iran

fYear

2011

fDate

11-14 Dec. 2011

Firstpage

591

Lastpage

594

Abstract

A low voltage, low power dual band Low Noise Amplifier (LNA) is presented in this paper. By employing a forward body bias of the MOSFET and current reuse topology the LNA can be operated at reduced supply voltage and power consumption while maintaining high gain due to its topology. Using 0.18 um CMOS process the LNA is designed at 2.4 GHz and 5.2 GHz with 13.1 dB and 14.2 dB voltage gains and 2.9 dB and 2.6 dB NF respectively with 0.7 V supply voltage and 3 mW power consumption.

Keywords

CMOS analogue integrated circuits; MOSFET; UHF amplifiers; integrated circuit design; low noise amplifiers; low-power electronics; microwave amplifiers; network topology; CMOS process; MOSFET; current reuse topology; forward body biasing technique; frequency 2.4 GHz; frequency 5.2 GHz; gain 13.1 dB; gain 14.2 dB; gain 2.6 dB; low voltage low power dual band low noise amplifier; low voltage low power dual-band LNA; noise figure 2.9 dB; power 3 mW; power consumption reduction; supply voltage reduction; voltage 0.7 V; CMOS integrated circuits; Dual band; Gain; Impedance; Noise measurement; Topology; Transconductance; Body bias; Dual-band LNA; Low voltage; current reuse topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems (ICECS), 2011 18th IEEE International Conference on

Conference_Location

Beirut

Print_ISBN

978-1-4577-1845-8

Electronic_ISBN

978-1-4577-1844-1

Type

conf

DOI

10.1109/ICECS.2011.6122344

Filename

6122344