Design of a CMOS LNA for the upper band of UWB receivers

Author

Zaker, Abdol-Hamid ; Shamsi, Hossein ; Gholami, Saeed ; Pourshamsaiee, Mahdi

Author_Institution

Islamic Azad Univ., Tehran, Iran

fYear

2011

fDate

11-14 Dec. 2011

Firstpage

595

Lastpage

598

Abstract

A two-stage LNA for the upper band of the Ultra Wide Band (6-10.6 GHz) receivers is introduced in this paper. The proposed LNA is composed of a conventional Cascode amplifier in the first stage and a common-source amplifier in the second stage. The common-source amplifier utilizes both NMOS and PMOS transistors, which increase the linearity. This LNA is simulated based on a 1.8 V, 0.18 μm CMOS technology. The average of NF and IIP3 parameters are about 2.8 dB and -1 dB, respectively. S21 is about 13 dB with a variation less than 1 dB. The power dissipation of the LNA is about 16.5 mW.

Keywords

CMOS integrated circuits; amplifiers; radio receivers; ultra wideband communication; ultra wideband technology; CMOS LNA; CMOS technology; NMOS; PMOS transistors; UWB receivers; conventional cascode amplifier; frequency 6 GHz to 10.6 GHz; power dissipation; ultra wide band receivers; voltage 1.8 V; Band pass filters; CMOS integrated circuits; Impedance matching; Linearity; Noise measurement; Receivers; Simulation; CMOS integrated circuits; Low Noise Amplifier (LNA); RF; Ultra Wide Band (UWB);

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems (ICECS), 2011 18th IEEE International Conference on

Conference_Location

Beirut

Print_ISBN

978-1-4577-1845-8

Electronic_ISBN

978-1-4577-1844-1

Type

conf

DOI

10.1109/ICECS.2011.6122345

Filename

6122345