DocumentCode
2921899
Title
The effect of ground bond-wire on the performance of CMOS class-E power amplifiers
Author
Yavari, Masoud ; Naseh, Sasan
Author_Institution
Ferdowsi Univ. of Mashhad, Mashhad, Iran
fYear
2011
fDate
11-14 Dec. 2011
Firstpage
603
Lastpage
606
Abstract
The effect of the ground bond-wire inductance on the performance of class-E power amplifiers is analyzed and investigated. It is shown that for a given supply voltage and output power, this inductance decreases the value of the series excessive reactance and the voltage stress on the active device. The simulation results of a quasi-ideal circuit and a CMOS circuit in presence of a typical ground bond-wire inductance of 1 nH are presented to validate the analysis.
Keywords
CMOS integrated circuits; inductance; power amplifiers; CMOS circuit; CMOS class-E power amplifiers; ground bond-wire inductance; CMOS integrated circuits; Capacitance; Inductance; Power amplifiers; RLC circuits; Resistance; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems (ICECS), 2011 18th IEEE International Conference on
Conference_Location
Beirut
Print_ISBN
978-1-4577-1845-8
Electronic_ISBN
978-1-4577-1844-1
Type
conf
DOI
10.1109/ICECS.2011.6122347
Filename
6122347
Link To Document