DocumentCode
2921931
Title
Formulation of design principle utilizing wide-gap fluoride hetero-structures for deep ultraviolet optical devices
Author
Diwa, G. ; Quema, A. ; Ono, S. ; Sarukura, N. ; Kawazoe, Y. ; Fukuda, T.
Author_Institution
Institute for Molecular Science (IMS), Myodaiji, Okazaki, Aichi, Japan
fYear
2005
fDate
30-02 Aug. 2005
Firstpage
471
Lastpage
472
Abstract
This work reports on the feasibility of a design principle formulated using Li(1-x) Kx Ba(1-y) Mgy F3 double-hetero structure laser diode (LD) based on either KMgF3 or LiBaF3 substrate and operating at a wavelength in the deep ultraviolet region.
Keywords
Diode lasers; III-V semiconductor materials; Lattices; Light emitting diodes; Optical design; Optical devices; Optical materials; Photonic band gap; Proposals; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Print_ISBN
0-7803-9242-6
Type
conf
DOI
10.1109/CLEOPR.2005.1569479
Filename
1569479
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