Table of contents

The following topics are dealt with: IC layouts proximity correction; model-based layout optimization; silicon lattice damage measurement; embedded mechanical stress sensors; E-beam inspection methodology; backside wafer damage induced wafer front side defect; post laser anneal surface condition characterization; process-design sensitive test chip inspection; reticle re-qualification methods; advanced wafer fabs; automated wafer edge inspection system; IC manufacturing; yield-limiting nano-scale whisker defects; photolithography; EEPROM Cell; SOI analog circuits; surface killer defect detection; crystalline X-ray diffraction for semiconductor metrology; silicon surface roughness impact; power semiconductor devices; SOI-based microprocessor chip; BiCMOS technology wafer storage quality; immersion lithography; drain transistor reliability; shallow trench isolation; DRAM photoresist development analysis; overall equipment productivity; zero defect manufacturing product analysis; yield prediction system; self-align double patterning process; NAND flash cell; microelectronic device manufacturing; and balanced machine workload dispatching scheme.