Title :
Investigation of LT-MBE grown 1.55 /spl mu/m GaInAs/AlInAs MQWs
Author :
Biermann, K. ; Nickel, D. ; Elsaesser, Thomas ; Kunzel, H.
Author_Institution :
Max-Born-Inst fur Nichtluneare Opt. & Kurzzetspektroskopie, Berlin, Germany
Abstract :
Summary form only given. On the research level fiber-based optical communication technology has been progressing towards transmission of data rates in a single fiber even in the Tbit/s range. For such high speed photonic devices fs optical response of the base III-V material is mandatory. It has been shown that MBE growth at low temperatures is a viable way to produce material systems that offer traps suited for fast capture of excited carriers. LT GaInAs/AlInAs MQWs is a promising nonlinear material system for ultrafast optical devices operating in the crucial 1.55-/spl mu/m wavelength region. Therefore, unintentionally doped GaInAs/AlInAs MQWs lattice matched to InP were grown by MBE at growth temperatures ranging from 550/spl deg/C down to 100/spl deg/C. The material parameters of the MQWs were evaluated by means of X-ray diffraction, Hall, photoluminescence, absorption and carrier lifetimes measurements at 300 K.
Keywords :
Hall effect; III-V semiconductors; X-ray diffraction; aluminium compounds; carrier lifetime; gallium arsenide; high-speed optical techniques; indium compounds; molecular beam epitaxial growth; nonlinear optics; photoluminescence; semiconductor epitaxial layers; semiconductor quantum wells; 1.55 mum; 300 K; 550 to 100 C; GaInAs-AlInAs; GaInAs/AlInAs multiple quantum well; Hall measurements; III-V material; LT-MBE growth; MBE; MBE growth; Tbit/s range; X-ray diffraction; absorption measurements; carrier lifetimes measurements; data transmission rates; excited carriers; femtosecond optical response; fiber-based optical communication technology; growth temperatures; high speed photonic devices; material parameters; material systems; nonlinear material system; photoluminescence; single fiber; traps; ultrafast optical devices; Communications technology; Fiber nonlinear optics; High speed optical techniques; III-V semiconductor materials; Nonlinear optical devices; Optical devices; Optical fiber communication; Optical fiber devices; Optical materials; Quantum well devices;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.906925
