Investigation of LT-MBE grown 1.55 /spl mu/m GaInAs/AlInAs MQWs

Summary form only given. On the research level fiber-based optical communication technology has been progressing towards transmission of data rates in a single fiber even in the Tbit/s range. For such high speed photonic devices fs optical response of the base III-V material is mandatory. It has been shown that MBE growth at low temperatures is a viable way to produce material systems that offer traps suited for fast capture of excited carriers. LT GaInAs/AlInAs MQWs is a promising nonlinear material system for ultrafast optical devices operating in the crucial 1.55-/spl mu/m wavelength region. Therefore, unintentionally doped GaInAs/AlInAs MQWs lattice matched to InP were grown by MBE at growth temperatures ranging from 550/spl deg/C down to 100/spl deg/C. The material parameters of the MQWs were evaluated by means of X-ray diffraction, Hall, photoluminescence, absorption and carrier lifetimes measurements at 300 K.