The effect of recovery on NBTI characterization of thick non-nitrided oxides

Author

Reisinger, H. ; Vollertsen, R.-P. ; Wagner, P.-J. ; Huttner, T. ; Martin, A. ; Aresu, S. ; Gustin, W. ; Grasser, T. ; Schlünder, C.

Author_Institution

Corp. Reliability Methodology, Infineon Technol., Munich

fYear

2008

fDate

12-16 Oct. 2008

Firstpage

1

Lastpage

6

Abstract

NBTI degradation and recovery have been investigated for 7 to 50nm oxides and compared to a thin 2.2nm nitrided oxide. A wide regime of stress fields 2.5MV/cm to 8MV/cm has been covered. NBTI effect for the nitrided oxide is larger than for non-nitrided oxides. The percentage of threshold shift DeltaVth which is "lost" during a long measurement delay - which is the quantity leading to curved DeltaVth vs stress-time curves and to errors in extrapolated lifetimes - is about equal for nitrided or thick non-nitrided oxides. The fraction of recovered DeltaVth is strongly dependent on stress time but only weakly dependent on stress field. Recovery in thick oxides leads to exactly the same problems as for non-nitrided oxides and clearly a fast measurement method is needed.

Keywords

MOSFET; recovery; semiconductor device reliability; NBTI; measurement delay; pMOSFETs; recovery; stress field; thick nonnitrided oxides; threshold shift; Data mining; Delay; Laboratories; Lead compounds; MOSFETs; Niobium compounds; Stress; Temperature; Thickness measurement; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International

Conference_Location

S. Lake Tahoe, CA

ISSN

1930-8841

Print_ISBN

978-1-4244-2194-7

Electronic_ISBN

1930-8841

Type

conf

DOI

10.1109/IRWS.2008.4796074

Filename

4796074