Development of design rules for reliable tungsten plugs using simulations

Author

IslamRaja, M.Mazhar ; Bariya, A.J. ; Saraswat, K.C. ; Cappelli, M.A. ; McVittie, J.P. ; Moberly, L. ; Lahri, R.

Author_Institution

Dept. of Mech. Eng., Stanford Univ., CA, USA

fYear

1992

fDate

March 31 1992-April 2 1992

Firstpage

8

Lastpage

10

Abstract

Design rules for the fabrication of reliable tungsten via plugs, produced using blanket tungsten deposition and etch-back, have been developed using experimental results and computer simulations. Fast computer simulations have been used to define the design rules for this process. The use of computer simulations greatly reduces the number of experiments required to develop a process or to establish design rules. The design rules ensure that the via plugs are void free and that they do not form a severe topography during the etch-back.<>

Keywords

CMOS integrated circuits; integrated circuit technology; metallisation; reliability; semiconductor process modelling; tungsten; 0.8 micron; CMOS technology; blanket deposition; computer simulations; deposition profiles; design rules; etch-back; reliable W via plugs; sidewall slope; void formation; CMOS technology; Computational modeling; Computer simulation; Dielectric losses; Etching; Fabrication; Mechanical engineering; Plugs; Surfaces; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium 1992. 30th Annual Proceedings., International

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-0473-X

Type

conf

DOI

10.1109/RELPHY.1992.187614

Filename

187614