DocumentCode
2922135
Title
The Influence Of Complex Geometries And Stress Non-Uniformity On Reliability
Author
Aal, A.
Author_Institution
ELMOS Semicond. AG, Dortmund
fYear
2008
fDate
12-16 Oct. 2008
Firstpage
25
Lastpage
31
Abstract
This paper describes a general method and a model for lifetime extrapolations which can account for stress non-uniformities caused by complex geometries or also geometrical variations due to the manufacturing process. The effect of these non-uniformities combined with different materials involved in a stacked geometry on the overall back end of line (BEOL) dielectric reliability are considered theoretically and illustrated via simulations. The key idea behind this is to consider test structures from a system level viewpoint rather than from a single component viewpoint. The effects of variation in the line-to-line spacings between the metal lines and those of the sidewall angle are considered as well as variations due to the positions across the wafer.
Keywords
MIS structures; reliability; back end of line dielectric reliability; complex geometries; line-to-line spacings; nMOS test structure; stress nonuniformities; Capacitors; Dielectrics; Doping; Fluctuations; Geometry; Semiconductor device reliability; Shape measurement; Solid modeling; Stress; System testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location
S. Lake Tahoe, CA
ISSN
1930-8841
Print_ISBN
978-1-4244-2194-7
Electronic_ISBN
1930-8841
Type
conf
DOI
10.1109/IRWS.2008.4796079
Filename
4796079
Link To Document