DocumentCode :
2922135
Title :
The Influence Of Complex Geometries And Stress Non-Uniformity On Reliability
Author :
Aal, A.
Author_Institution :
ELMOS Semicond. AG, Dortmund
fYear :
2008
fDate :
12-16 Oct. 2008
Firstpage :
25
Lastpage :
31
Abstract :
This paper describes a general method and a model for lifetime extrapolations which can account for stress non-uniformities caused by complex geometries or also geometrical variations due to the manufacturing process. The effect of these non-uniformities combined with different materials involved in a stacked geometry on the overall back end of line (BEOL) dielectric reliability are considered theoretically and illustrated via simulations. The key idea behind this is to consider test structures from a system level viewpoint rather than from a single component viewpoint. The effects of variation in the line-to-line spacings between the metal lines and those of the sidewall angle are considered as well as variations due to the positions across the wafer.
Keywords :
MIS structures; reliability; back end of line dielectric reliability; complex geometries; line-to-line spacings; nMOS test structure; stress nonuniformities; Capacitors; Dielectrics; Doping; Fluctuations; Geometry; Semiconductor device reliability; Shape measurement; Solid modeling; Stress; System testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location :
S. Lake Tahoe, CA
ISSN :
1930-8841
Print_ISBN :
978-1-4244-2194-7
Electronic_ISBN :
1930-8841
Type :
conf
DOI :
10.1109/IRWS.2008.4796079
Filename :
4796079
Link To Document :
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