• DocumentCode
    2922135
  • Title

    The Influence Of Complex Geometries And Stress Non-Uniformity On Reliability

  • Author

    Aal, A.

  • Author_Institution
    ELMOS Semicond. AG, Dortmund
  • fYear
    2008
  • fDate
    12-16 Oct. 2008
  • Firstpage
    25
  • Lastpage
    31
  • Abstract
    This paper describes a general method and a model for lifetime extrapolations which can account for stress non-uniformities caused by complex geometries or also geometrical variations due to the manufacturing process. The effect of these non-uniformities combined with different materials involved in a stacked geometry on the overall back end of line (BEOL) dielectric reliability are considered theoretically and illustrated via simulations. The key idea behind this is to consider test structures from a system level viewpoint rather than from a single component viewpoint. The effects of variation in the line-to-line spacings between the metal lines and those of the sidewall angle are considered as well as variations due to the positions across the wafer.
  • Keywords
    MIS structures; reliability; back end of line dielectric reliability; complex geometries; line-to-line spacings; nMOS test structure; stress nonuniformities; Capacitors; Dielectrics; Doping; Fluctuations; Geometry; Semiconductor device reliability; Shape measurement; Solid modeling; Stress; System testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
  • Conference_Location
    S. Lake Tahoe, CA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4244-2194-7
  • Electronic_ISBN
    1930-8841
  • Type

    conf

  • DOI
    10.1109/IRWS.2008.4796079
  • Filename
    4796079