Title :
Hot carrier induced HFE degradation in BiCMOS transistors
Author :
Varker, C.J. ; Pettengill, D. ; Shiau, Wei-Tsun ; Reuss, B.
Author_Institution :
Adv. Technol. Center, Mesa, AZ, USA
fDate :
March 31 1992-April 2 1992
Abstract :
Experimental results are presented of an investigation designed to develop an understanding of the physical mechanisms and the process inputs causing reduced hot carrier reliability in BiCMOS npn transistors. The overall objective is to correlate and extract information on process module and device design during product development and to develop reliability-driven rules which can be used to reduce hot carrier degradation of the forward current gain and to improve overall transistor reliability. The results show the effects of the intrinsic base implant dose and energy as well as thermal history on hot-carrier-induced forward-current-gain degradation in BiCMOS npn transistors.<>
Keywords :
BiCMOS integrated circuits; bipolar transistors; hot carriers; reliability; semiconductor device testing; BiCMOS n-p-n transistors; device design; forward current gain; hot carrier degradation; hot carrier reliability; intrinsic base implant dose; process module design; thermal history; transistor reliability; BiCMOS integrated circuits; Degradation; Hot carriers; Packaging; Semiconductor device testing; Stress; System testing; Transistors; Voltage; Wafer scale integration;
Conference_Titel :
Reliability Physics Symposium 1992. 30th Annual Proceedings., International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0473-X
DOI :
10.1109/RELPHY.1992.187623
