Evaluation of hot carrier effects in TFT by emission microscopy

Author

Komori, Junko ; Maeda, Shigenobu ; Sugahara, Kazuyuki ; Mitsuhashi, Jun-ichi

Author_Institution

Mitsubishi Electric Corp., Hyogo, Japan

fYear

1992

fDate

March 31 1992-April 2 1992

Firstpage

63

Lastpage

67

Abstract

Hot carrier degradation of p-channel polycrystalline silicon thin film transistors was investigated by emission microscopy. An automatic measurement system was developed for the evaluation of hot carrier degradation. In the system, the measurement of electrical characteristics and the monitoring of photoemission are done simultaneously. This system was used to identify the dominant mechanism of hot carrier degradation in thin-film transistors and to evaluate the effect of plasma hydrogenation on hot carrier degradation.<>

Keywords

hot carriers; insulated gate field effect transistors; photoemission; semiconductor device testing; surface treatment; thin film transistors; TFT; automatic measurement system; bottom gated pMOS TFT; electrical characteristics; emission microscopy; hot carrier degradation; p-channel polysilicon TFT; photoemission; plasma hydrogenation; thin film transistors; Degradation; Electric variables; Electric variables measurement; Hot carrier effects; Hot carriers; Microscopy; Monitoring; Plasma measurements; Silicon; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium 1992. 30th Annual Proceedings., International

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-0473-X

Type

conf

DOI

10.1109/RELPHY.1992.187624

Filename

187624