Title :
Effect of substrate hot carrier stress on high-k gate stack
Author :
Park, Hokyung ; Bersuker, Gennadi ; Kang, Chang Yong ; Young, Chadwin ; Tseng, Hsing-Huang ; Jammy, Raj
Author_Institution :
SEMATECH, Austin, TX
Abstract :
The origin of stress induced leakage current and defect generation process in the high-k/metal gate stacks under the substrate hot carrier stress and constant voltage stress is investigated. The data suggests that the defects responsible for the SILC increase are located near the high-k/SiO2 interface. Generation of these defects is mostly caused by the cold carriers injected from the inversion layer rather than by the hot substrate carriers.
Keywords :
MOSFET; hot carriers; leakage currents; semiconductor device reliability; silicon compounds; substrates; MOSFET; SiO2; cold carriers; defect generation; high-k metal gate stacks; stress induced leakage current; substrate hot carrier stress; voltage stress; Dielectric substrates; Electron traps; Frequency; High K dielectric materials; High-K gate dielectrics; Hot carriers; Leakage current; MOSFETs; Stress; Substrate hot electron injection;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location :
S. Lake Tahoe, CA
Print_ISBN :
978-1-4244-2194-7
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2008.4796083
