DocumentCode :
2922259
Title :
CW diode end-pumped Nd:YAP laser at 1.34 /spl mu/m
Author :
Boucher, M. ; Musset, O. ; Boquillon, J.P. ; Georgiou, E.
Author_Institution :
Lab. of Phys., CNRS, Dijon, France
fYear :
2000
fDate :
7-12 May 2000
Firstpage :
227
Lastpage :
228
Abstract :
Summary form only given.We have studied the Nd:YAP laser crystal, also named Nd:YAlO/sub 3/. The main interests of the YAP crystal is to exhibit high conductivity and hardness combined with a low laser threshold like the most common Nd: YAG crystal. But the most important reason is the large branching ratio for /sup 4/F/sub 3/2//spl rarr//sup 4/I/sub 11/2/ transitions, which makes Nd:YAP very attractive for operation at 1.34 /spl mu/m. Some experiments around 1.3 /spl mu/m have shown that Nd: YAP was more efficient than Nd:YAG under flashlamp pumping. This paper presents the results obtained with the Nd:YAP compared with the Nd:YAG around 1.3 and 1.0 /spl mu/m. To our knowledge this is the first study of a multiwatt diode-pumped laser system based on the Nd:YAP crystal.
Keywords :
flash lamps; hardness; infrared sources; laser modes; laser transitions; neodymium; optical pumping; solid lasers; yttrium compounds; 1.34 mum; CW diode end-pumped Nd:YAP laser; Nd:YAP laser crystal; Nd:YAlO/sub 3/; YAlO/sub 3/:Nd; flashlamp pumping; hardness; high conductivity; large branching ratio; low laser threshold; multiwatt diode-pumped laser system; Diodes; Laser beams; Laser modes; Laser stability; Mirrors; Neodymium; Optical coupling; Optimized production technology; Solids; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
Type :
conf
DOI :
10.1109/CLEO.2000.906945
Filename :
906945
Link To Document :
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