Title :
Comparison of High-frequency Noise Correlation Models in SiGe HBTs
Author :
Sha, Yong-Ping ; Zhang, Wan-Rong ; Xie, Hong-Yun
Author_Institution :
Beijing Univ. of Technol., Beijing
Abstract :
Considering the noise correlation term between collector and base current shot noise, there mainly are four noise parameter models of SiGe HBTs, including the unified noise model (UNI), two SPICE noise models (SPN1, SPN2), the thermodynamic noise model (TDN). A comparison of these models was investigated in this work. A SiGe HBT based on BiCMOS process was fabricated and its S-parameters and Minimum Noise Figure were tested. Through the comparison between the measurement and the simulation results from these models, two of the models, the UNI and the SPN2, were obviously in good agreement with the measured results at high-frequency.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; S-parameters; bipolar integrated circuits; heterojunction bipolar transistors; semiconductor device noise; BiCMOS process; HF amplifiers; SPICE noise model; SiGe HBT; heterojunction bipolar transistors; high-frequency noise correlation models; minimum noise figure; s-parameters; thermodynamic noise model; unified noise model; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit modeling; Integrated circuit noise; Low-frequency noise; Radio frequency; SPICE; Semiconductor device noise; Silicon germanium; Thermodynamics; Correlation; HF amplifiers; Heterojunction bipolar transistors; Noise; Silicon; Simulation;
Conference_Titel :
Radio-Frequency Integration Technology, 2007. RFIT 007. IEEE International Workshop on
Conference_Location :
Rasa Sentosa Resort
Print_ISBN :
978-1-4244-1307-2
Electronic_ISBN :
978-1-4244-1308-9
DOI :
10.1109/RFIT.2007.4443951
