Breakdown mechanism for the thin EOT Dy2O3/HfO2 dielectric

Author

Lee, Tackhwi ; Park, Sung Il ; Lee, Jack C. ; Banerjee, Sanjay K.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX

fYear

2008

fDate

12-16 Oct. 2008

Firstpage

58

Lastpage

59

Abstract

The intrinsic time dependent dielectric breakdown (TDDB) of the thin bilayered Dy₂O₃/HfO₂ gate oxide has been studied. A physical based breakdown model has been developed and can be used to predict the lifetime for the lower stress voltage and extract the defect density by introducing the effective oxide thinning model. This model has also been extended to include temperature dependency and the effective activation energy is calculated.

Keywords

Poole-Frenkel effect; dielectric thin films; dysprosium compounds; electric breakdown; hafnium compounds; Dy₂O₃-HfO₂; activation energy; defect density; effective oxide Ihinning model; thin dielectric; thin multi-metal structure; time dependent dielectric breakdown; Acceleration; Breakdown voltage; Dielectric breakdown; Dielectric measurements; Electric breakdown; Hafnium oxide; High-K gate dielectrics; Leakage current; Predictive models; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International

Conference_Location

S. Lake Tahoe, CA

ISSN

1930-8841

Print_ISBN

978-1-4244-2194-7

Electronic_ISBN

1930-8841

Type

conf

DOI

10.1109/IRWS.2008.4796086

Filename

4796086