Title :
Breakdown mechanism for the thin EOT Dy2O3/HfO2 dielectric
Author :
Lee, Tackhwi ; Park, Sung Il ; Lee, Jack C. ; Banerjee, Sanjay K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX
Abstract :
The intrinsic time dependent dielectric breakdown (TDDB) of the thin bilayered Dy2O3/HfO2 gate oxide has been studied. A physical based breakdown model has been developed and can be used to predict the lifetime for the lower stress voltage and extract the defect density by introducing the effective oxide thinning model. This model has also been extended to include temperature dependency and the effective activation energy is calculated.
Keywords :
Poole-Frenkel effect; dielectric thin films; dysprosium compounds; electric breakdown; hafnium compounds; Dy2O3-HfO2; activation energy; defect density; effective oxide Ihinning model; thin dielectric; thin multi-metal structure; time dependent dielectric breakdown; Acceleration; Breakdown voltage; Dielectric breakdown; Dielectric measurements; Electric breakdown; Hafnium oxide; High-K gate dielectrics; Leakage current; Predictive models; Temperature dependence;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location :
S. Lake Tahoe, CA
Print_ISBN :
978-1-4244-2194-7
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2008.4796086
