Mismatch drift: a reliability issue for analog MOS circuits

Author

Michael, Christopher ; Wang, Hai ; Teng, C.S. ; Shibley, James ; Lewicki, Larry ; Shyu, Chin-Miin ; Lahri, Rajeeva

Author_Institution

National Semiconductor Corp., Santa Clara, CA, USA

fYear

1992

fDate

March 31 1992-April 2 1992

Firstpage

81

Lastpage

84

Abstract

Mismatch drift is a major process reliability issue for analog and mixed-signal designs. Mismatch stability was examined for a 0.8- mu m CMOS process using a cascode current minor test circuit. After 1000-h burn-in at 125 degrees C under matched gate voltage stress, no drift in parameter matching was measured. However, for the same burn-in conditions with unmatched gate voltage stress, drifts in threshold voltage mismatch of 0.3 mV for n-channel and 2.4 mV for p-channel transistor pairs have been observed. This mismatch drift is larger for short-channel devices, indicating that the drift-causing phenomenon is greater at the drain/source edge.<>

Keywords

CMOS integrated circuits; amplifiers; circuit reliability; integrated circuit testing; linear integrated circuits; 0.8 micron; 1000 h; 125 degC; analog MOS circuits; burn-in; cascode current minor test circuit; matched gate voltage stress; mismatch drift; mixed-signal designs; n-channel transistor pairs; p-channel transistor pairs; reliability; short-channel devices; threshold voltage mismatch; unmatched gate voltage stress; Analog circuits; CMOS process; Circuit stability; Circuit testing; Degradation; Digital circuits; Integrated circuit reliability; Mirrors; Stress measurement; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium 1992. 30th Annual Proceedings., International

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-0473-X

Type

conf

DOI

10.1109/RELPHY.1992.187627

Filename

187627