RF Noise Modeling of CMOS 90nm Device Using Enhanced BSIM4 with Additional Noise Source

Author

Shi, Jinglin ; Xiong, Yong Zhong ; Issaoun, Ammar ; Nan, Lan ; Lin, Fujiang ; Peng, A.S. ; Cho, M.H. ; Chen, D. ; Yeh, C.S.

Author_Institution

Inst. of Microelectronics, Singapore

fYear

2007

fDate

9-11 Dec. 2007

Firstpage

206

Lastpage

209

Abstract

A practical methodology for accurately modeling RF noise performance of deep submicron CMOS technologies using BSIM4 model is presented in this paper. The noise characterization parameters are extracted from measurements from 1.0 GHz to 18.0 GHz performed on 90 nm RF CMOS device. Based on the foundry provided model, RF and low frequency noise are fitted with slightly tuned BSIM4 parameters and extrinsic parasitics. Then accurate noise modeling performance is achieved by just one additional frequency dependent noise source using the van der Ziel configuration to fit accurately the four noise parameters over wide range of frequencies and bias conditions.

Keywords

CMOS integrated circuits; MMIC; integrated circuit modelling; integrated circuit noise; RF CMOS device; RF noise modeling; additional noise source; deep submicron CMOS technologies; enhanced BSIM4 model; frequency 1 GHz to 18 GHz; low frequency noise; noise characterization; size 90 nm; van der Ziel configuration; CMOS technology; Circuit noise; Foundries; Integrated circuit modeling; Low-frequency noise; Noise measurement; Performance evaluation; Radio frequency; Semiconductor device modeling; Thermal resistance; BSIM4; CMOS 90nm device; RF noise; modeling; noise source; van der Ziel;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio-Frequency Integration Technology, 2007. RFIT 007. IEEE International Workshop on

Conference_Location

Rasa Sentosa Resort

Print_ISBN

978-1-4244-1307-2

Electronic_ISBN

978-1-4244-1308-9

Type

conf

DOI

10.1109/RFIT.2007.4443952

Filename

4443952