Title :
Pipeline defects in CMOS MOSFET devices caused by SWAMI isolation
Author :
Wang, CT ; Haddad, Homayoon ; Berndt, Paul ; Yeh, Bao-Sun ; Connors, Bill
Author_Institution :
Hewlett-Packard, Corvallis, OR, USA
fDate :
March 31 1992-April 2 1992
Abstract :
A pipeline defect which became a leakage path between source and drain in an n-channel MOSFET was identified. It was found that a 20-second Wright-etch will clearly delineate the pipe. The cause of the pipeline was the improper SWAMI (side wall masked isolation) etch which generated stress at the island corners. This stress generated high density dislocation lines which made vacancies readily available for enhanced phosphorus diffusion.<>
Keywords :
CMOS integrated circuits; etching; insulated gate field effect transistors; integrated circuit technology; semiconductor device testing; vacancy-dislocation interactions; CMOS MOSFET devices; SWAMI isolation; Wright-etch; high density dislocation lines; island corners; leakage path; n-channel MOSFET; pipeline defect; side wall masked isolation; stress generation; vacancies; Bipolar integrated circuits; CMOS process; CMOS technology; FETs; MOSFET circuits; Pipelines; Read-write memory; Semiconductor device modeling; Silicon; Tail;
Conference_Titel :
Reliability Physics Symposium 1992. 30th Annual Proceedings., International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0473-X
DOI :
10.1109/RELPHY.1992.187628
