Pulsed 25-108/spl deg/C operation of GaInNAs multiple quantum well vertical cavity lasers

Author

Coldren, C.W. ; Larson, Michael C. ; Spruytte, S.G. ; Garrett, H.E. ; Harris, James S.

Author_Institution

Solid State & Photonics Lab., Stanford Univ., CA, USA

fYear

2000

fDate

7-12 May 2000

Firstpage

229

Lastpage

230

Abstract

Summary form only given.GaAs-based vertical cavity surface emitting laser (VCSEL) diodes are becoming increasingly important in transmitters. By using GaInNAs MQW active regions, the emission wavelength of GaAs-based lasers can be extended into the range of 1200-1300 nm. In addition, the reduced temperature sensitivity of this active region allows for the possibility of uncooled transmitter operation.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser transitions; optical transmitters; quantum well lasers; surface emitting lasers; 1.2 mum; 24 to 108 C; GaAs-based lasers; GaAs-based vertical cavity surface emitting laser; GaInNAs; GaInNAs MQW VCSEL lasers; GaInNAs MQW active regions; GaInNAs multiple quantum well vertical cavity lasers; VCSEL laser diodes; active region; emission wavelength; optical transmitters; pulsed operation; reduced temperature sensitivity; uncooled transmitter operation; Heat sinks; Mirrors; Optical fibers; Optical pulses; Optical transmitters; Plasma temperature; Power generation; Quantum well lasers; Substrates; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-634-6

Type

conf

DOI

10.1109/CLEO.2000.906949

Filename

906949