Title :
Pulsed 25-108/spl deg/C operation of GaInNAs multiple quantum well vertical cavity lasers
Author :
Coldren, C.W. ; Larson, Michael C. ; Spruytte, S.G. ; Garrett, H.E. ; Harris, James S.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA, USA
Abstract :
Summary form only given.GaAs-based vertical cavity surface emitting laser (VCSEL) diodes are becoming increasingly important in transmitters. By using GaInNAs MQW active regions, the emission wavelength of GaAs-based lasers can be extended into the range of 1200-1300 nm. In addition, the reduced temperature sensitivity of this active region allows for the possibility of uncooled transmitter operation.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser transitions; optical transmitters; quantum well lasers; surface emitting lasers; 1.2 mum; 24 to 108 C; GaAs-based lasers; GaAs-based vertical cavity surface emitting laser; GaInNAs; GaInNAs MQW VCSEL lasers; GaInNAs MQW active regions; GaInNAs multiple quantum well vertical cavity lasers; VCSEL laser diodes; active region; emission wavelength; optical transmitters; pulsed operation; reduced temperature sensitivity; uncooled transmitter operation; Heat sinks; Mirrors; Optical fibers; Optical pulses; Optical transmitters; Plasma temperature; Power generation; Quantum well lasers; Substrates; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.906949
