Thermal stability of ferroelectric memories

Author

Gregory, Anne ; Zucca, Rodolfo ; Wang, Shi Qing ; Brassington, Michael ; Abt, Norman

Author_Institution

National Semiconductor Corp., Santa Clara, CA, USA

fYear

1992

fDate

March 31 1992-April 2 1992

Firstpage

91

Lastpage

94

Abstract

The authors review the latest fatigue and aging data on ferroelectric memory products and discuss thermal characteristics which limit the nonvolatile data retention storage temperature. They evaluate the effects of thermal excursions on the remanent polarization level in polycrystalline films. An excursion to an elevated temperature has been found to cause a reduction in retained polarization. The reduction is a function of the maximum temperature difference. The loss in capacitor polarization imposes constraints on the design of reliable integrated ferroelectric nonvolatile memory devices.<>

Keywords

ageing; circuit reliability; dielectric polarisation; fatigue; ferroelectric storage; integrated circuit testing; lead compounds; PZT; PbZrO3TiO3; aging; capacitor polarization; fatigue; ferroelectric memories; nonvolatile data retention storage temperature; reliability design; remanent polarization level; thermal characteristics; thermal excursions; thermal stability; Aging; Capacitors; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Polarization; Switches; Temperature; Thermal stability; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium 1992. 30th Annual Proceedings., International

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-0473-X

Type

conf

DOI

10.1109/RELPHY.1992.187629

Filename

187629