Title :
Thermal stability of ferroelectric memories
Author :
Gregory, Anne ; Zucca, Rodolfo ; Wang, Shi Qing ; Brassington, Michael ; Abt, Norman
Author_Institution :
National Semiconductor Corp., Santa Clara, CA, USA
fDate :
March 31 1992-April 2 1992
Abstract :
The authors review the latest fatigue and aging data on ferroelectric memory products and discuss thermal characteristics which limit the nonvolatile data retention storage temperature. They evaluate the effects of thermal excursions on the remanent polarization level in polycrystalline films. An excursion to an elevated temperature has been found to cause a reduction in retained polarization. The reduction is a function of the maximum temperature difference. The loss in capacitor polarization imposes constraints on the design of reliable integrated ferroelectric nonvolatile memory devices.<>
Keywords :
ageing; circuit reliability; dielectric polarisation; fatigue; ferroelectric storage; integrated circuit testing; lead compounds; PZT; PbZrO3TiO3; aging; capacitor polarization; fatigue; ferroelectric memories; nonvolatile data retention storage temperature; reliability design; remanent polarization level; thermal characteristics; thermal excursions; thermal stability; Aging; Capacitors; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Polarization; Switches; Temperature; Thermal stability; Voltage;
Conference_Titel :
Reliability Physics Symposium 1992. 30th Annual Proceedings., International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0473-X
DOI :
10.1109/RELPHY.1992.187629
