DocumentCode :
2922349
Title :
Adiabatic tapered mode converter for selectively-oxidized waveguide devices
Author :
Vawter, G. Allen
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Volume :
2
fYear :
2002
fDate :
10-14 Nov. 2002
Firstpage :
546
Abstract :
In recent times a new class of semiconductor photonic device has gained popularity. These devices use lateral selective oxidation to create highly efficient, low-threshold-current edge-emitting lasers where both the optical waveguide and lateral current confinement are achieved by lateral selective oxidation of AlGaAs. We have also recently explored use of selective-oxidation waveguides for low-drive-voltage high-speed optical phase modulators and electroabsorption modulators suitable for >40 Gb/s optical modulation. We propose a new concept for an adiabatic tapered mode converter for buried-oxide waveguide devices. Within this new converter the optical mode of the laser or modulator is expanded or shrunk, depending on the direction of light travel, to move light efficiently between the very small (1.5 × 0.3 μm FWHM) mode size of the oxidized device and the large, 10 μm, modal field diameter of conventional single-mode optical telecom fiber. The new design achieves this by variation of the width of a selectively-oxidized waveguide mesa and a novel upper mesa, or rib, forming a wedding-cake-type overall structure.
Keywords :
electro-optical modulation; optical design techniques; optical waveguide components; oxidation; semiconductor lasers; 0.3 mm; 1.5 micron; 10 mm; AlGaAs; adiabatic tapered mode converter; buried-oxide waveguide devices; conventional single-mode optical telecom fiber; design; electroabsorption modulators; laser; lateral current confinement; lateral selective oxidation; low-drive-voltage high-speed optical phase modulators; low-threshold-current edge-emitting lasers; modal field diameter; mode size; modulator; optical mode; optical modulation; optical waveguide; rib; selectively-oxidized waveguide devices; selectively-oxidized waveguide mesa; semiconductor photonic device; upper mesa; wedding-cake-type overall structure; High speed optical techniques; Laser modes; Optical devices; Optical modulation; Optical waveguides; Oxidation; Phase modulation; Semiconductor lasers; Semiconductor waveguides; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
ISSN :
1092-8081
Print_ISBN :
0-7803-7500-9
Type :
conf
DOI :
10.1109/LEOS.2002.1159423
Filename :
1159423
Link To Document :
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