DocumentCode
2922396
Title
Lithographically-defined gain apertures within selectively oxidized VCSELs
Author
Choquette, Kent D. ; Allerman, A.A. ; Geib, Kent M. ; Hindi, J.J.
Author_Institution
Center for Compound Semicond. Sci. & Tech., Sandia Nat. Labs., Albuquerque, NM, USA
fYear
2000
fDate
7-12 May 2000
Firstpage
232
Lastpage
233
Abstract
Summary form only given.Selectively oxidized vertical cavity surface emitting lasers (VCSELs) have demonstrated record performance such as low threshold current/voltage, high efficiency, and high-speed modulation characteristics. Because of the strong index confinement created by buried oxide layers used to define the laser cavity, oxidized VCSELs typically operate in multiple transverse optical modes, whereas single-mode operation is required for many VCSEL applications. One approach to discriminate against higher-order optical modes is to define a small gain region within a larger diameter cavity. We report on high-performance gain-apertured selectively oxidized VCSELs, which exhibit high single-mode operation as high as 3 m with side mode suppression ratios>30 dB.
Keywords
electro-optical modulation; laser modes; lithography; oxidation; semiconductor lasers; surface emitting lasers; VCSEL applications; buried oxide layers; high efficiency; high-performance gain-apertured selectively oxidized VCSELs; high-speed modulation characteristics; laser cavity; lithographically-defined gain apertures; low threshold current; multiple transverse optical modes; oxidized VCSELs; selectively oxidized VCSEL; selectively oxidized vertical cavity surface emitting lasers; side mode suppression; single-mode operation; small gain region; strong index confinement; Apertures; High speed optical techniques; Laser modes; Optical modulation; Optical recording; Stimulated emission; Surface emitting lasers; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
1-55752-634-6
Type
conf
DOI
10.1109/CLEO.2000.906953
Filename
906953
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