DocumentCode :
2922402
Title :
Growth and characterization of low-threshold 1.3 μm GaAsSb quantum well laser
Author :
Liu, Po-Wei ; Lee, Min-Han ; Lin, Hao-Hsiung
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume :
2
fYear :
2002
fDate :
10-14 Nov. 2002
Firstpage :
552
Abstract :
By using Sb monomer to deposit a GaAsSb layer, we demonstrate a high quality low-threshold GaAsSb/GaAs double quantum well laser diode. The samples were grown on n-GaAs(100) substrates using VG V80MKII solid-source molecular beam epitaxy. Besides the Ga beam used for the group-III source, Sb1 and As4 beams were adopted for group-V sources.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; 1.3 micron; As4; As4 beam; Ga; Ga beam; GaAs; GaAsSb-GaAs; Sb monomer; Sb1; Sb1 beam; VG V80MKII solid-source molecular beam epitaxy; characterization; group-III source; group-V sources; growth; high quality low-threshold GaAsSb/GaAs double quantum well laser diode; low-threshold 1.3 μm GaAsSb quantum well laser; n-GaAs(100) substrates; Diode lasers; Electrons; Gallium arsenide; Laser beams; Molecular beam epitaxial growth; Optical saturation; Quantum well lasers; Substrates; Temperature; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
ISSN :
1092-8081
Print_ISBN :
0-7803-7500-9
Type :
conf
DOI :
10.1109/LEOS.2002.1159426
Filename :
1159426
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2922402
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