Growth and characterization of low-threshold 1.3 μm GaAsSb quantum well laser

Author

Liu, Po-Wei ; Lee, Min-Han ; Lin, Hao-Hsiung

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

2

fYear

2002

fDate

10-14 Nov. 2002

Firstpage

552

Abstract

By using Sb monomer to deposit a GaAsSb layer, we demonstrate a high quality low-threshold GaAsSb/GaAs double quantum well laser diode. The samples were grown on n-GaAs(100) substrates using VG V80MKII solid-source molecular beam epitaxy. Besides the Ga beam used for the group-III source, Sb₁ and As₄ beams were adopted for group-V sources.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; 1.3 micron; As₄; As₄ beam; Ga; Ga beam; GaAs; GaAsSb-GaAs; Sb monomer; Sb₁; Sb₁ beam; VG V80MKII solid-source molecular beam epitaxy; characterization; group-III source; group-V sources; growth; high quality low-threshold GaAsSb/GaAs double quantum well laser diode; low-threshold 1.3 μm GaAsSb quantum well laser; n-GaAs(100) substrates; Diode lasers; Electrons; Gallium arsenide; Laser beams; Molecular beam epitaxial growth; Optical saturation; Quantum well lasers; Substrates; Temperature; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7500-9

Type

conf

DOI

10.1109/LEOS.2002.1159426

Filename

1159426