• DocumentCode
    2922410
  • Title

    Backside Wafer Damage Induced Wafer Front Side Defect and Yield Impact

  • Author

    Wang, Neng-Cheng ; Chang, Hui-An ; Chang, Chung-I ; Wang, Tings

  • Author_Institution
    ProMOS Technol. Inc. Production Technol. Div., Hsinchu
  • fYear
    2007
  • fDate
    11-12 June 2007
  • Firstpage
    58
  • Lastpage
    60
  • Abstract
    The article describes the wafer yield loss due to wafer backside defect. The backside defect pattern will transfer to the next wafer surface during the following clean process and cause the process defect issue. These defects will impact the yield. Real root cause finding let prevent action work well.
  • Keywords
    inspection; integrated circuit yield; surface cleaning; wafer-scale integration; backside wafer damage; clean process; wafer front side defect; wafer yield loss; Cooling; Etching; Inspection; Light scattering; Particle scattering; Production; Size control; Surface cleaning; Testing; US Department of Energy; Dark field inspection; FIB; SEM; TEM; backside inspection tool; dual beam review station; e-beam inspection; wafer backside damage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference, 2007. ASMC 2007. IEEE/SEMI
  • Conference_Location
    Stresa
  • Print_ISBN
    1-4244-0652-8
  • Electronic_ISBN
    1-4244-0653-6
  • Type

    conf

  • DOI
    10.1109/ASMC.2007.375081
  • Filename
    4259247
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2922410