Lumped Element Coplanar-Microstrip-Transition Model for Si-RFICs up to 90 GHz

Author

Gruner, Daniel ; Zhang, Zihui ; Korndoerfer, Falk ; Boeck, Georg

Author_Institution

Berlin Univ. of Technol., Berlin

fYear

2007

fDate

9-11 Dec. 2007

Firstpage

236

Lastpage

239

Abstract

The development of a lumped element model for monolithic integrated transitions from coplanar probe pads to microstrip line structures is presented for a frequency range up to 90 GHz. Several passive test structures have been fabricated in a five metal layer SiGe BiCMOS process technology. The values of the lumped elements are determined based on measurements and are tabulated in this work. In order to verify the performance of the proposed transition model, comparisons with measurements of known structures are carried out.

Keywords

BiCMOS integrated circuits; MIMIC; microstrip lines; BiCMOS process technology; EM simulation; MIMIC; Si-RFIC; SiGe; coplanar probe pads; lumped element coplanar-microstrip-transition model; microstrip line structures; monolithic integrated transitions; BiCMOS integrated circuits; Frequency; Germanium silicon alloys; Integrated circuit measurements; Microstrip; Microwave technology; Probes; Silicon germanium; Strips; Testing; EM simulation; Microstrip transitions; integrated circuit modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio-Frequency Integration Technology, 2007. RFIT 007. IEEE International Workshop on

Conference_Location

Rasa Sentosa Resort

Print_ISBN

978-1-4244-1307-2

Electronic_ISBN

978-1-4244-1308-9

Type

conf

DOI

10.1109/RFIT.2007.4443958

Filename

4443958