III-V materials growth by hydride VPE for high frequency optoelectronic devices

Author

Lourdudoss, Sebartian ; Kjebon, Olle ; Sun, Yan-Ting ; Schatz, Richard ; Söderström, David ; Barrios, C.A. ; Messmer, Egbert Rodriguez

Author_Institution

R. Inst. of Technol., Kista, Sweden

Volume

2

fYear

2002

fDate

10-14 Nov. 2002

Firstpage

554

Abstract

Hydride vapour phase epitaxy is flexible for fabricating buried heterostructure lasers yielding high bandwidth. Its potential for long and short wavelength lasers based on the emerging materials systems GaAs/GaInAs(N)(Sb) and GaAs/AlGaAs, respectively is highlighted. In-situ mesa etching cum immediate regrowth and heteroepitaxy of InP on silicon are additional facilities offered by HVPE.

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; etching; gallium arsenide; indium compounds; optical materials; quantum well lasers; semiconductor growth; surface emitting lasers; vapour phase epitaxial growth; DFB; GaAlAs-GaInAs-GaAs; GaAs-AlGaAs; GaInAs-GaAlAs-AlAs-GaAs; GaInAsP-InP; GaInP-GaInAsP-GaAs; III-V materials growth; InAlGaAs-InGaAs-InP; InP:Fe; Si; VCSEL; buried heterostructure lasers; heteroepitaxy; high bandwidth; high frequency optoelectronic devices; hydride VPE; hydride vapour phase epitaxy; immediate regrowth; in-situ mesa etching; long wavelength lasers; short wavelength lasers; Bandwidth; Epitaxial growth; Etching; Frequency; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Optical materials; Optoelectronic devices; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7500-9

Type

conf

DOI

10.1109/LEOS.2002.1159427

Filename

1159427