DocumentCode
2922519
Title
Design, Simulation and Measurement Analysis on the S-parameters of an Inductively-degenerated Common-source Open-drain Cascode Low Noise Amplifier
Author
Noh, Norlaili Mohd ; Zulkifli, Tun Zainal Azni
Author_Institution
Univ. Sains Malaysia, Nibong Tebal
fYear
2007
fDate
9-11 Dec. 2007
Firstpage
254
Lastpage
257
Abstract
An inductively-degenerated common-source (CS) open-drain cascode LNA was designed for W-CDMA application. The operating frequency for the design was at 2.14 GHz, which is at the center of the reception range of the W-CDMA standard. The supply voltage is 1.8 V at 0.18 mum CMOS process. The LNA was designed using power-constrained noise optimization method in obtaining the width of the transistor of 290 mum. Post-layout simulations with distributed resistors and capacitors were performed. On-chip inductors with quality factor of 8 were utilized to resonate with the metal-insulator-metal capacitor (mimcap). The mimcap was also used to isolate VDD and ground. The input was 50 Omega matched using the transistor as well as an inductor at the gate and three parallel 1.65 nH inductors acting as a 0.55 nH degeneration inductor at the source. Detailed design steps are described in this paper with plots of the post-layout simulation and measurement results provided. These plots are analyzed extensively in this paper and justification for the errors are given. The 12.8 dB of S21 obtained from the post-layout and a much less 7.8 dB from the measurement shows that there is an offset by 5 dB. Derivations are given to show that the unmatched output is the cause of the gain offset. S11 is measured at -24 dB which is very close to the simulated value of -25.4 dB. The current measured and simulated at a bias voltage of 0.65 V is 4.1 mA.
Keywords
CMOS analogue integrated circuits; S-parameters; UHF amplifiers; UHF integrated circuits; code division multiple access; low noise amplifiers; CMOS process; S-parameters; WCDMA application; common-source open-drain cascode low noise amplifier; current 4.1 mA; frequency 2.14 GHz; inductively-degenerated low noise amplifier; onchip inductor; power-constrained noise optimization; size 0.18 mum; size 290 mum; voltage 0.65 V; voltage 1.8 V; Analytical models; CMOS process; Frequency; Inductors; Low-noise amplifiers; MIM capacitors; Multiaccess communication; Noise measurement; Scattering parameters; Voltage; Inductively-degenerated common-source open-drain cascode; W-CDMA;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio-Frequency Integration Technology, 2007. RFIT 007. IEEE International Workshop on
Conference_Location
Rasa Sentosa Resort
Print_ISBN
978-1-4244-1307-2
Electronic_ISBN
978-1-4244-1308-9
Type
conf
DOI
10.1109/RFIT.2007.4443964
Filename
4443964
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