DocumentCode
2922575
Title
Aluminum-free active region high-power laser diodes
Author
Salokatve, A. ; Nightingale, J.L.
Author_Institution
Coherent Semicond. Group, Tampere, Finland
fYear
2000
fDate
7-12 May 2000
Firstpage
241
Lastpage
242
Abstract
Summary form only given. Use of aluminum-free epitaxial structures for near-infrared laser diodes has been an active research area in the past decade. These edge-emitting laser diodes have demonstrated operational lifetimes exceeding 10,000 hours at high output powers and high efficiencies. Improvements both in epitaxial structure and in thermal management have enabled these results.
Keywords
laser beams; laser reliability; semiconductor device reliability; semiconductor epitaxial layers; semiconductor lasers; waveguide lasers; 10000 h; Al-free active region; Al-free active region high-power laser diodes; active research area; edge-emitting laser diodes; epitaxial structure; epitaxial structures; high efficiencies; high output powers; high-power laser diodes; laser diodes; near-infrared laser diodes; operational lifetimes; thermal management; Bars; Diode lasers; Laser beams; Lenses; Optical arrays; Optical design; Optical pulses; Packaging; Phased arrays; Semiconductor laser arrays;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
1-55752-634-6
Type
conf
DOI
10.1109/CLEO.2000.906963
Filename
906963
Link To Document