Title :
Modeling of 0.15 μm InGaAs pHEMT up to 60 GHz
Author :
Luo, B. ; Guo, Y.X. ; Wong, S.Y. ; Ong, L.C.
Author_Institution :
Inst. for Infocomm Res., Singapore
Abstract :
In this paper, a small-signal model for a two finger 0.15 μm gate width InGaAs pHEMT up till 60 GHz is presented. Measured methods are explored to obtain accurate S-parameters of the pHEMT. The modeling results have shown good agreement with the experimentally extracted S-parameters.
Keywords :
III-V semiconductors; S-parameters; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; semiconductor device models; InGaAs; S-parameter; frequency 1 GHz to 60 GHz; millimeter wave frequency; pHEMT modeling; pseudomorphic HEMT; size 0.15 micron; small-signal model; Bandwidth; Calibration; Frequency estimation; HEMTs; Indium gallium arsenide; Millimeter wave technology; PHEMTs; Probes; Roentgenium; Scattering parameters; InGaAs pHEMT modeling; Millimeter wave; Pseudomorphic HEMT; S-parameter; Small-signal model;
Conference_Titel :
Radio-Frequency Integration Technology, 2007. RFIT 007. IEEE International Workshop on
Conference_Location :
Rasa Sentosa Resort
Print_ISBN :
978-1-4244-1307-2
Electronic_ISBN :
978-1-4244-1308-9
DOI :
10.1109/RFIT.2007.4443972
