Title :
Dislocation based mechanisms in electromigration
Author :
Livesay, B.R. ; Donlin, N.E. ; Garrison, A.K. ; Harris, H.M. ; Hubbard, J.L.
Author_Institution :
Manuf. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
fDate :
March 31 1992-April 2 1992
Abstract :
The role of dislocation dynamics in electromigration degradation is presented based on both theoretical models and experimental data. Interactions between high current densities and dislocations were studied using micromechanics measurements, in situ scanning electron microscopy, and transmission electron microscopy, microstructural studies and calculations of dislocation interaction phenomena. Correlations between thin-film strengthening, electroplasticity, dislocation observations, and the crystallography of whiskers are presented.<>
Keywords :
dislocations; electromigration; electron diffraction examination of materials; failure analysis; metallisation; reliability; scanning electron microscope examination of materials; transmission electron microscope examination of materials; calculations; crystallography; dislocation based mechanisms; dislocation dynamics; dislocation interaction phenomena; dislocation observations; dislocations; electromigration degradation; electroplasticity; experimental data; high current densities; in situ SEM; in situ TEM; micromechanics measurements; microstructural studies; models; scanning electron microscopy; thin-film strengthening; transmission electron microscopy; whiskers; Atomic measurements; Conductive films; Crystal microstructure; Crystalline materials; Crystallization; Current density; Degradation; Electromigration; Grain boundaries; Thermal stresses;
Conference_Titel :
Reliability Physics Symposium 1992. 30th Annual Proceedings., International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0473-X
DOI :
10.1109/RELPHY.1992.187649
