Title :
Oxidation enhanced optical response on gallium nitride
Author :
Peng, L.-H. ; Hsu, Y.-C. ; Liao, C.-H. ; Hsu, K.-T. ; Jong, C.-S. ; Huang, C.-N. ; Ho, J.-K. ; Chiu, C.-C. ; Chen, C.-Y.
Author_Institution :
Inst. of Electro Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Summary form only given.The wide bandgap III-V nitrides have been long recognized as a material system of outstanding opto-electronic properties compared with those of group IV and II-VI materials. Although much attention has been emphasized on the device application, little has been devoted to the issues of surface passivation on GaN. We report a UV-enhanced, reaction-rate limited wet oxidation process on GaN at room temperature. A high peak oxidation rate can be achieved.
Keywords :
III-V semiconductors; gallium compounds; oxidation; passivation; photoluminescence; GaN; UV-enhanced reaction-rate limited wet oxidation process; device application; enhanced optical response; gallium nitride; high peak oxidation rate; opto-electronic properties; room temperature; surface passivation; wide bandgap III-V nitrides; Cameras; Degradation; Doping; Gallium nitride; III-V semiconductor materials; Material properties; Oxidation; Petroleum; Silicon; Spatial resolution;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.906972
