Measurement Issues for High-k Technology including NBTI

This tutorial was comprised of several parts that address various measurement methodologies required for properly characterizing high-k gate stacks. While discussing these techniques, emphasis was placed on proper instrumentation and set up, followed by proper data analysis and interpretation. Some of the key methodologies that were discussed are: capacitance-voltage (C-V), pulsed current-voltage (1-V), and reliability evaluation techniques. The intended outcome of this tutorial was for the attendees to leave with a better understanding of high-k characterization requirements that he/she can implement in everyday measurements and have increased insight about these novel gate stacks.