DocumentCode
2922768
Title
Towards Understanding Negative Bias Temperature Instability
Author
Grasser, Tibor
Author_Institution
Tech. Univ. of Vienna, Vienna
fYear
2008
fDate
12-16 Oct. 2008
Firstpage
145
Lastpage
145
Abstract
Modeling efforts of negative bias temperature instability date back to the work of Jeppson and Svensson in 1977, who proposed the basic form of the popular reaction-diffusion model. This model is still at the heart of many modeling attempts today. However, recent research indicates that even refined variants of this model, while getting some features of NBTI right, cannot capture some crucial aspects of the phenomenon, most notably its ubiquitous logarithmically-decaying recovery phase. Consequently, alternative models have been developed. Some of these models, like the extensions based on dispersive transport of the released hydrogen species, predict like the underlying reaction-diffusion model, that the overall degradation is controlled by (dispersive) diffusion of hydrogen. Alternatively, some models assume that the actual depassivation reaction is the rate limiting step. On top of the creation of interface states, some authors have argued that trapped holes form a considerable part of the overall degradation. Despite all the efforts, however, no universally accepted theory of NBTI is available today, with published models covering only some aspects of the phenomenon and giving contradictory predictions of other aspects. This tutorial attempted to give a broad review of published modeling attempts, comparing their strengths and weaknesses, and eventually listing the requirements for a more complete model of NBTI.
Keywords
integrated circuit modelling; integrated circuit reliability; passivation; depassivation reaction; dispersive transport; negative bias temperature instability; reaction-diffusion model; ubiquitous logarithmically-decaying recovery phase; Circuit testing; Data analysis; Dispersion; High K dielectric materials; High-K gate dielectrics; Negative bias temperature instability; Niobium compounds; Predictive models; Semiconductor device modeling; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location
S. Lake Tahoe, CA
ISSN
1930-8841
Print_ISBN
978-1-4244-2194-7
Electronic_ISBN
1930-8841
Type
conf
DOI
10.1109/IRWS.2008.4796110
Filename
4796110
Link To Document