DocumentCode :
2922768
Title :
Towards Understanding Negative Bias Temperature Instability
Author :
Grasser, Tibor
Author_Institution :
Tech. Univ. of Vienna, Vienna
fYear :
2008
fDate :
12-16 Oct. 2008
Firstpage :
145
Lastpage :
145
Abstract :
Modeling efforts of negative bias temperature instability date back to the work of Jeppson and Svensson in 1977, who proposed the basic form of the popular reaction-diffusion model. This model is still at the heart of many modeling attempts today. However, recent research indicates that even refined variants of this model, while getting some features of NBTI right, cannot capture some crucial aspects of the phenomenon, most notably its ubiquitous logarithmically-decaying recovery phase. Consequently, alternative models have been developed. Some of these models, like the extensions based on dispersive transport of the released hydrogen species, predict like the underlying reaction-diffusion model, that the overall degradation is controlled by (dispersive) diffusion of hydrogen. Alternatively, some models assume that the actual depassivation reaction is the rate limiting step. On top of the creation of interface states, some authors have argued that trapped holes form a considerable part of the overall degradation. Despite all the efforts, however, no universally accepted theory of NBTI is available today, with published models covering only some aspects of the phenomenon and giving contradictory predictions of other aspects. This tutorial attempted to give a broad review of published modeling attempts, comparing their strengths and weaknesses, and eventually listing the requirements for a more complete model of NBTI.
Keywords :
integrated circuit modelling; integrated circuit reliability; passivation; depassivation reaction; dispersive transport; negative bias temperature instability; reaction-diffusion model; ubiquitous logarithmically-decaying recovery phase; Circuit testing; Data analysis; Dispersion; High K dielectric materials; High-K gate dielectrics; Negative bias temperature instability; Niobium compounds; Predictive models; Semiconductor device modeling; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location :
S. Lake Tahoe, CA
ISSN :
1930-8841
Print_ISBN :
978-1-4244-2194-7
Electronic_ISBN :
1930-8841
Type :
conf
DOI :
10.1109/IRWS.2008.4796110
Filename :
4796110
Link To Document :
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