Title :
Reliability for "Future" Devices
Author :
Haensch, Wilfried
Abstract :
Device design has enjoyed over three decades of scaling leaving the fundamental device architecture basically unchanged. With SiO2 gate dielectric hovering around 1 nm for the high performance space device engineers looked at different methods than scaling for performance boost. Stress enhancement of mobility is a prime example for a non scaling based performance booster. With the successful implementation of high-k dielectrics there is hope that the path to scaling is opened up again. In spite of the rapid advancement in gate dielectric scaling, most likely fully depleted devices will be needed to continue the density scaling of the past. We discussed some of the challenges and opportunities that are related to the change of device architecture and requirements to continue the trend in integration density. The presentation outlined the path down to the ultimate FET device.
Keywords :
carrier mobility; field effect transistors; high-k dielectric thin films; nanoelectronics; semiconductor device reliability; silicon compounds; thin film transistors; FET device; carrier mobility; device reliability; fully depleted devices; fundamental device architecture; gate dielectric scaling; gate dielectrics; high-k dielectrics; high-performance space device; nonscaling-based performance booster; stress enhancement; Circuit testing; Data analysis; Dispersion; High K dielectric materials; High-K gate dielectrics; Negative bias temperature instability; Niobium compounds; Predictive models; Semiconductor device modeling; Titanium compounds;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location :
S. Lake Tahoe, CA
Print_ISBN :
978-1-4244-2194-7
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2008.4796112
