DocumentCode :
2922819
Title :
Discussion Group (DG) summary: NVM Reliability
Author :
Tao, Guoqiao ; Shea, Peter J O
Author_Institution :
NXP Semiconductor Gertstweg 2, tel: +31-24-353-4549; fax: +31-24-353-5200; e-mail: Guoqiao.tao@NXP.com
fYear :
2008
fDate :
12-16 Oct. 2008
Firstpage :
150
Lastpage :
150
Keywords :
Acceleration; Error correction; Error correction codes; Ferroelectric films; Field programmable gate arrays; Leakage current; Nonvolatile memory; Occupational stress; Random access memory; Semiconductor device reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location :
South lake Tahoe, CA, USA
ISSN :
1930-8841
Print_ISBN :
978-1-4244-2194-7
Electronic_ISBN :
1930-8841
Type :
conf
DOI :
10.1109/IRWS.2008.4796114
Filename :
4796114
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2922819
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