Title :
Power amplifiers in 0.13 μm CMOS for DECT: a comparison between two different architectures
Author :
Zimmermann, Niklas ; Johansson, Ted ; Heinen, Stefan
Author_Institution :
RWTH Aachen Univ., Aachen
Abstract :
Two 1.9 GHz power amplifiers (PAs) have been designed and fabricated in a 0.13 μm standard CMOS process. They are both two-stage push-pull amplifiers with more than 27dBm output power. The amplifier stages of both PAs have exactly the same transistor structures and sizes, but the input and interstage matching networks are realized differently. The first PA uses on-chip transformers for the coupling of the stages, the second PA LC matching networks. In this paper both topologies are compared and benefits and drawbacks of the different structures are discussed.
Keywords :
CMOS analogue integrated circuits; MMIC power amplifiers; UHF integrated circuits; cordless telephone systems; differential amplifiers; impedance matching; CMOS process; DECT; LC matching networks; frequency 1.9 GHz; on-chip transformers; power amplifiers; size 1.3 μm; two-stage push-pull amplifiers; CMOS analog integrated circuits; CMOS technology; Differential amplifiers; Impedance matching; Integrated circuit technology; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Transceivers; Baluns; CMOS analog integrated circuits; impedance matching; power amplifiers; transformers;
Conference_Titel :
Radio-Frequency Integration Technology, 2007. RFIT 007. IEEE International Workshop on
Conference_Location :
Rasa Sentosa Resort
Print_ISBN :
978-1-4244-1307-2
Electronic_ISBN :
978-1-4244-1308-9
DOI :
10.1109/RFIT.2007.4443983
