Title :
Photocurrent oscillations in GaInNAs / GaAs multi-quantum well p-i-n structures
Author :
Khalil, Hagir Mohammed ; Mazzucato, Simone ; Royall, B. ; Balkan, Naci ; Puustinen, Janne ; Korpijärvi, Ville-Markus ; Guina, Mircea
Author_Institution :
Sch. of Comput. Sci. & Electron. Eng., Univ. of Essex, Colchester, UK
Abstract :
In this work the photoconductivity of a p-i-n Ga0.952In0.048N0.016As0.984/GaAs multiple quantum well (MQW) structure is investigated as a function of temperature. At low temperatures step-like increases are observed in the devices I-V characteristic when illuminated with a 950nm wavelength light. The number of visible oscillations varies according to the temperature and incident light intensity with a maximum of 18 being visible. Since the exciting illumination energy is bellow the GaAs bandgap, these oscillations arise only from the GaInNAs quantum wells and can be explained in terms of resonant tunneling from subbands into the adjacent quantum well.
Keywords :
gallium compounds; p-i-n diodes; photoconductivity; quantum wells; GaInNAs-GaAs; GaInNAs/GaAs multiquantum well p-i-n structures; I-V characteristic; illumination energy; incident light intensity; multiple quantum well structure; photoconductivity; photocurrent oscillations; Gallium arsenide; Oscillators; Photoconductivity; Photovoltaic cells; Quantum well devices; Resonant tunneling devices; Temperature; Dilute Nitrides; GaInNAs; Multi-quantum well; p-i-n diodes; resonant tunneling;
Conference_Titel :
Computer Science and Electronic Engineering Conference (CEEC), 2011 3rd
Conference_Location :
Colchester
Print_ISBN :
978-1-4577-1300-2
DOI :
10.1109/CEEC.2011.5995838
