Title :
Analysis of silicide process defects by non-contact electron-beam charging
Author :
Jenkins, Keith A. ; Agnello, Paul D. ; Bucelot, Thomas J.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
March 31 1992-April 2 1992
Abstract :
Electron beam charging without any conventional electrical measurements has been used to understand gate electrode leakage currents in a silicide process. Using this technique, it was determined that the leakage is caused by single defects which are small compared to the typical circuit dimensions, which occur on the gate perimeter, and are randomly distributed. Combined with one additional process step, it was determined that the leakage is not due to silicide bridging, but rather to a gate oxide overetch. The measurement has been instituted as an inline process monitor to screen for silicide leakage defects.<>
Keywords :
CMOS integrated circuits; electron beam testing; failure analysis; fault location; inspection; monitoring; process control; scanning electron microscopy; CMOS; defects analysis; electron-beam charging; gate electrode leakage currents; gate oxide overetch; gate perimeter; inline process monitor; randomly distributed; screening; silicide process defect; single defects; voltage contrast microscopy; CMOS technology; Electrical resistance measurement; Electrodes; Electron beams; FETs; Leakage current; Mechanical variables measurement; Scanning electron microscopy; Silicides; Testing;
Conference_Titel :
Reliability Physics Symposium 1992. 30th Annual Proceedings., International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0473-X
DOI :
10.1109/RELPHY.1992.187661