Title :
The effect of recovery on NBTI characterization of thick non-nitrided oxides
Author :
Reisinger, H. ; Vollertsen, R.P. ; Wagner, P.J. ; Aresu, S. ; Gustin, W. ; Grasser, T. ; Schlunder, C.
Author_Institution :
Infineon Technologies, Corporate Reliability Methodology, D-81739 M??nchen, Germany
Abstract :
This article consists of a collection of slides from the author\´s conference presentation. Some of the specific areas/topics discussed include: 1. Motivation; 2. Comparison of "fast" and "slow" NBTI data for thick oxides. Raw data, Vth vs recovery-time, Examples for Vth-shift curves, power laws; 3. Lifetime extrapolation; 4. Problems of comparing different technologies / gate oxide thicknesses; 5. Comparison of "normalized NBTI" as fct of electric field. Finally, 6. Is effect of recovery "worse" for old technologies, thick nonnitrided oxides.
Keywords :
Electric variables measurement; Extrapolation; Lead compounds; Niobium compounds; Power measurement; Stress measurement; Thickness measurement; Time measurement; Titanium compounds; Voltage;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location :
S. Lake Tahoe, CA
Print_ISBN :
978-1-4244-2194-7
DOI :
10.1109/IRWS.2008.4796120
