Title :
1300 nm on gallium arsenide: quantum dots vs GaInNAs
Author :
Fiore, A. ; Markus, A. ; Chen, J.X. ; Paranthoen, C. ; Ilegems, M. ; Geelhaar, L. ; Riechert, H.
Author_Institution :
Inst. of Quantum Electron. & Photonics, Ecole Polytech. Fed. de Lausanne, Switzerland
Abstract :
Summary form only given. Among the most promising materials for 1300 nm emission applications are GaInNAs quantum wells (QWs) and InAs quantum dots (QDs). By directly comparing the radiative properties of identical structures comprising QDs and GaInNAs QWs, we evidence the fundamental differences between the two materials. From temperature-dependent photoluminescence (PL) experiments, we see a much stronger quenching of radiative efficiency for GaInNAs at room temperature (RT), which we attribute to a higher density of nonradiative defects related to N incorporation and low growth temperature. This is confirmed by the carrier lifetime values deduced from the time-resolved PL dynamics.
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; photoluminescence; quantum dot lasers; quantum well lasers; radiation quenching; semiconductor quantum dots; semiconductor quantum wells; time resolved spectra; 1300 nm; 1300 nm emission; GaAs; GaAs substrates; GaInNAs; GaInNAs quantum wells; InAs; InAs quantum dots; N incorporation; carrier lifetime; edge-emitting lasers; low growth temperature; nonradiative defects; optical gain materials; radiative efficiency quenching; radiative properties; temperature-dependent photoluminescence; time-resolved PL dynamics; vertical-cavity surface-emitting lasers; Gallium arsenide; Laser excitation; Optical materials; Photoluminescence; Quantum dot lasers; Quantum dots; Surface emitting lasers; Temperature; US Department of Transportation; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1159456
