Title :
Reactive ion etching for failure analysis applications
Author :
Abramo, Marsha T. ; Roy, E.B. ; LeCours, Steven M.
Author_Institution :
Div. of Gen. Technol., Essex Junction, VT, USA
fDate :
March 31 1992-April 2 1992
Abstract :
An attempt to develop and to optimize reactive ion etch processes for failure analysis applications is discussed. Reactive ion etching (RIE) provides several advantages over wet and plasma etching. Delayering of interlevel dielectric and passivation films with RIE results in anisotropic sidewalls. This insures that no metal is lifted, allowing mechanical and contactless multilevel probing. By adjusting process parameters, a wider range of selectivity to underlying films was realized than with either traditional wet or plasma etching. The results obtained with polysilicon, silicon dioxide, and organic passivation films are given.<>
Keywords :
failure analysis; passivation; sputter etching; SiO/sub 2/; anisotropic sidewalls; contactless multilevel probing; failure analysis applications; interlevel dielectric; organic passivation; passivation films; polysilicon; process parameters; reactive ion etch processes; Anisotropic magnetoresistance; Chemicals; Delay; Failure analysis; Plasma applications; Plasma chemistry; Plasma materials processing; Semiconductor films; Surface discharges; Wet etching;
Conference_Titel :
Reliability Physics Symposium 1992. 30th Annual Proceedings., International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0473-X
DOI :
10.1109/RELPHY.1992.187663
