Title :
Limitations of Analysis of Metal Impurities Analysis in High-k Film
Author :
Po, Ya-Ling ; Lin, Carol ; Chen, Shian-Shio ; Wang, Tings
Abstract :
This work studies the efficiency of various approaches, using such instruments as total reflection X-ray fluorescence (TXRF), atomic absorption spectrometry (AAS) and inductively coupled plasma mass spectrometry (ICP-MS). The target metals are sodium (Na), aluminum (Al), calcium (Ca), chromium (Cr), ferrum (Fe), nickel (Ni), copper (Cu), zinc (Zn) and hafnium(Hf). Analytical approaches are employed to elucidate the surface impurities after the wafer has been processed.
Keywords :
X-ray emission spectra; aluminium; calcium; chromium; copper; fluorescence; hafnium; hafnium compounds; high-k dielectric thin films; impurity absorption spectra; iron; mass spectra; nickel; sodium; zinc; HfO2:Al; HfO2:Ca; HfO2:Cr; HfO2:Cu; HfO2:Fe; HfO2:Hf; HfO2:Na; HfO2:Ni; HfO2:Zn; MOS transistors; aluminum; atomic absorption spectrometry; calcium; chromium; copper; dielectric constant; ferrum; gate dielectric; hafnium; hafnium oxide film; high-k film; high-k gate insulators; inductively coupled plasma mass spectrometry; metal impurities analysis; nickel; sodium; surface impurities; total reflection X-ray fluorescence; zinc; Calcium; Chromium; Copper; High K dielectric materials; High-K gate dielectrics; Impurities; Mass spectroscopy; Nickel; Optical films; Zinc;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2007. ASMC 2007. IEEE/SEMI
Conference_Location :
Stresa
Print_ISBN :
1-4244-0652-8
Electronic_ISBN :
1-4244-0653-6
DOI :
10.1109/ASMC.2007.375114
