Title :
Influence of substrate orientation on self-assembled InAs/GaAs quantum dots for long wavelength emission grown by molecular beam epitaxy
Author :
Saravanan, S. ; Vaccaro, P.O. ; Zanardi, J.M. ; Kubota, K. ; Aida, T.
Author_Institution :
ATR Adaptive Commun. Res. Labs., Kyoto, Japan
Abstract :
MBE grown self-organised InAs QDs on GaAs (100) and (n11) substrates have been investigated by AFM and PL. The results show that substrate orientations have a strong effect on the properties of QDs. The dependence of PL for different oriented substrates has been examined. It was found that, by reducing the strain and quantum confinement in InAs QDs, long-wavelength PL emission was obtained.
Keywords :
III-V semiconductors; atomic force microscopy; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; quantum dot lasers; self-assembly; semiconductor growth; semiconductor quantum dots; AFM; GaAs; GaAs (100) substrates; GaAs (n11) substrates; InAs-GaAs; MBE growth; PL spectrum; long-wavelength PL emission; molecular beam epitaxy; quantum confinement; self-assembled InAs/GaAs quantum dots; self-organised InAs QDs; semiconductor quantum dot lasers; strain; substrate orientation; Gallium arsenide; Laser modes; Molecular beam epitaxial growth; Quantum dot lasers; Quantum dots; Substrates; Surface morphology; US Department of Transportation; Vertical cavity surface emitting lasers; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1159458
