DocumentCode

2923011

Title

Copper line topology impact of SiOCH low-k dielectric reliability in advanced 45nm technology node and beyond

Author

Vilmay, M. ; Roy, D. ; Monget, C. ; Volpi, F. ; Chaix, J.-M.

Author_Institution

STMicroelectronics, 850 rue Jean Monnet 38926 Crolles, France

fYear

2008

fDate

12-16 Oct. 2008

Firstpage

1

Lastpage

19

Keywords

Breakdown voltage; Copper; Dielectric breakdown; Dielectric materials; Leakage current; Materials reliability; Robustness; Shape measurement; Stress; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International

Conference_Location

South lake Tahoe, CA, USA

ISSN

1930-8841

Print_ISBN

978-1-4244-2194-7

Electronic_ISBN

1930-8841

Type

conf

DOI

10.1109/IRWS.2008.4796123

Filename

4796123